晶體管存貯單元端點(diǎn)的數(shù)量是不受限制的.A transistor memory cell can be made with any number of terminals.也要求發(fā)現(xiàn)并描出這條包括所有端點(diǎn)的曲線.It is also required to discover and trace the curve containing all such points.但這兩個(gè)頂點(diǎn)不一定是不相同的, 譬如在兩個(gè)端點(diǎn)重合時(shí)的情況.These ...